2SB1116A
Unisonic Technologies
PNP EPITAXIAL SILICON TRANSISTORUTC 2SB1116/A
PNP EPITAXIAL SILICON TRANSISTOR
PNP EPITAXIAL SILICON TRANSISTOR
DESCRIPTION
* Complement to 2SD1616/A
APPLICATIONS
* Audio Frequency Power Amplifier * Medium Speed Switching
1
TO-92
1: Emitter
2: Collector
3: Base
ABSOLUTE MAXIMUM RATIN
2SB1116A
Weitron
PNP General Purpose Transistor2SB1116/2SB1116A PNP General Purpose Transistor
P b Lead(Pb)-Free
3 BASE COLLECTOR 2
1 2
1 EMITTER
3
TO-92
Maximum Ratings ( TA=25℃ C unless otherwise noted)
Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current C
2SB1116A
SeCoS
PNP Plastic Encapsulated Transistor2SB1116A
Elektronische Bauelemente
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
-1 A, -80 V PNP Plastic Encapsulated Transistor
FEATURES
High Collector Power Dissipation Complementary to 2SD1616A
G H
TO-92
CLASSIFICATION OF hFE
2SB1116A
NEC
PNP SILICON TRANSISTORSDATA SHEET
SILICON TRANSISTORS
2SB1116, 1116A
PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING
FEATURES • Low VCE(sat)
VCE(sat) = −0.20 V TYP. (IC = −1.0 A, IB = −50 mA) • High PT in small dimension with ge
2SB1116A
JCST
PNP TransistorJIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
2SB1116/1116A TRANSISTOR (PNP)
TO-92
FEATURES · High Collector Power Dissipation . · Complementary to 2SD1616/2SD1616A
1. EMITTER 2. COLLECTOR
MAXIMUM RATINGS (Ta=2