Datasheet 2SB1015A Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	2SB1015A	SILICON PNP TRIPLE DIFFUSED TYPE TRANSISTOR TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SB1015A 2SB1015A Audio Frequency Power Amplifier Applications · Low collector saturation voltage: VCE (sat) = −1.7 V (max) (IC = −3 A, IB = −0.3 A) · Collector power dissipation: PC = 25 W (Tc = 25°C) Maximum Ratings (Ta = 25°C) Cha	Toshiba Semiconductor

2SB10 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
2SB1010	PNP Silicon Transistor	ROHM Semiconductor
2SB1015	PNP transistor	Toshiba Semiconductor
2SB1018A	TRANSISTOR (HIGH CURRENT SWITCHING/ POWER AMPLIFIER APPLICATIONS) 2SB1018A TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT Process) 2SB1018A High Current Switching Applications Power Amplifier Applications Unit: mm • • • High collector current: IC = −7 A Low collector saturation voltage: VCE (sat) = −0	Toshiba Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
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