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Power Transistors 2SB0947 (2SB947), 2SB0947A (2SB947A) www.DataSheet4U.net Silicon PNP epitaxial planar type For low-voltage switcing Unit: mm 0.7±0.1 ■ Features • Low collector-emitter saturation voltage VCE(sat) • High-speed switching • Full-pack package which can be installed to the h
Power Transistors 2SB0947 (2SB947), 2SB0947A (2SB947A) www.DataSheet4U.net Silicon PNP epitaxial planar type For low-voltage switcing Unit: mm 0.7±0.1 ■ Features • Low collector-emitter saturation voltage VCE(sat) • High-speed switching • Full-pack package which can be installed to the h
Power Transistors 2SB0944 (2SB944) www.DataSheet4U.net Silicon PNP epitaxial planar type For power switching Complementary to 2SD1269 ■ Features • Low collector-emitter saturation voltage VCE(sat) • Satisfactory linearity of forward current transfer ratio hFE • Large collector current IC
Power Transistors 2SB0940 (2SB940), 2SB0940A (2SB940A) www.DataSheet4U.net Silicon PNP epitaxial planar type For power amplification For TV vertical deflection output Complementary to 2SD1264, 2SD1264A ■ Features • High collector-emitter voltage (Base open) VCEO • Large collector power dissi
Power Transistors 2SB0939 (2SB939), 2SB0939A (2SB939A) www.DataSheet4U.net Silicon PNP epitaxial planar type Darlington For midium-speed power switching Complementary to 2SD1262, 2SD1262A 10.0±0.3 1.5±0.1 Unit: mm 8.5±0.2 6.0±0.2 3.4±0.3 1.0±0.1 Collector-base voltage (Emitter open) 2SB09
Power Transistors 2SB0938 (2SB938), 2SB0938A (2SB938A) www.DataSheet4U.net Silicon PNP epitaxial planar type Darlington For power amplification and switching Complementary to 2SD1261, 2SD1261A ■ Features • High forward current transfer ratio hFE • High-speed switching • N type package enab
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