2SAR552P5
ROHM Semiconductor
Middle Power Transistors2SAR552P5
Middle Power Transistors (-30V / -3A)
Parameter
VCEO IC
Value
-30V -3A
lFeatures
1)Low saturation voltage, typically VCE(sat) =-400mV (Max.) (IC/IB=-1A/-50mA) 2)High speed switching
lOutline
SOT-89 SC-62
MPT3
lInner circuit
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2SAR552P
Midium Power TransistorsMidium Power Transistors (-30V / -3A)
2SAR552P
Structure PNP Silicon epitaxial planar transistor
Features 1) Low saturation voltage, typically
VCE (sat) = -0.4V (Max.) (IC / IB= -1A / -50mA) 2) High speed switching
Applications Driver
Packaging specifications
Package Type Code
Ba
ROHM Semiconductor
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