2SAR513P5
ROHM Semiconductor
Middle Power Transistors2SAR513P5
Middle Power Transistors(-50V / -1A)
Parameter
VCEO IC
Value
-50V -1A
lFeatures
1)Low saturation voltage,typically VCE(sat)=-400mV(Max.) (IC/IB=-500mA/-25mA) 2)High speed switching
lOutline
SOT-89 SC-62
MPT3
lInner circuit
2SAR513R
Middle Power Transistors2SAR513R
PNP -1.0A -50V Middle Power Transistor
Parameter
VCEO IC
Value
-50V -1A
lFeatures
1)Suitable for Middle Power Driver 2)Complementary NPN Types:2SCR513R 3)Low VCE(sat) VCE(sat)=-400mV(Max.) (IC/IB=-500A/-25mA)
lOutline
SOT-346T SC-96
TSMT3
lInner circuit
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ROHM Semiconductor
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2SAR513P
Midium Power TransistorsMidium Power Transistors (-50V / -1A)
2SAR513P
Structure PNP Silicon epitaxial planar transistor
Features 1) Low saturation voltage, typically
VCE (sat) = -0.4V (Max.) (IC / IB= -500mA / -25mA) 2) High speed switching
Applications Driver
Packaging specifications
Package Type Cod
ROHM Semiconductor
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