2SAR512P5
ROHM Semiconductor
Middle Power Transistors2SAR512P5
Medium Power Transistors(-30V/-2A)
Parameter
VCEO IC
Value
-30V -2A
lFeatures
1)Low saturation voltage,typically VCE(sat)=-0.4V(Max.) (IC/IB=-700mA/-35mA) 2)High speed switching
lOutline
SOT-89 SC-62
MPT3
lInner circuit
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2SAR512R
Middle Power Transistors2SAR512R
PNP -2.0A -30V Middle Power Transistor
Parameter
VCEO IC
Value
-30V -2A
lFeatures
1)Suitable for Middle Power Driver 2)Complementary NPN Types:2SCR512R 3)Low VCE(sat) VCE(sat)=-400mV(Max.) (IC/IB=-700mA/-35mA)
lOutline
SOT-346T SC-96
TSMT3
lInner circuit
ROHM Semiconductor
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2SAR512P
Midium Power TransistorsMedium Power Transistors (−30V / −2A)
2SAR512P
Structure PNP Silicon epitaxial planar transistor
Features 1) Low saturation voltage, typically
VCE (sat) = -0.4V (Max.) (IC / IB= -700mA / -35mA) 2) High speed switching
Applications Driver
Packaging specifications
Package Type Code
Taping T1
ROHM Semiconductor
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