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2SA843
Silicon PNP Power TransistorINCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SA843
DESCRIPTION ·Collector-Emitter Breakdown Voltage
: V(BR)CEO= -150V(Min) ·DC Current Gain
: hFE= 60-200@ IC= -0.4A ·Complement to Type 2SC1683
APPLICATIONS ·Audio frequency power amplifier applications.
A
Inchange Semiconductor
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2SA844
Silicon PNP Epitaxial2SA844
Silicon PNP Epitaxial
Application
Low frequency amplifier
Outline
TO-92 (1)
1. Emitter 2. Collector 3. Base 3 2 1
2SA844
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Emitter current Collector po
Hitachi Semiconductor
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