2SA841 전자부품 데이터시트

Production specification Silicon Epitaxial Planar Transistor FEATURES z Commplementary to 2SC1623. z High DC current gain:hFE=200typ. (VCE=-6.0V,IC=-1.0mA) z High Voltage: VCEO=-50V. Pb Lead-free 2SA812 APPLICATIONS z Audio frequency, general purpose amplifier. ORDERING INFORMATION Type No.

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SA812 TRANSISTOR (PNP) FEATURES z Complementary to 2SC1623 z High DC Current Gain: hFE=200 TYP.(VCE=-6V,IC=-1mA) z High Voltage: Vceo=-50V SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Unit : mm MAXIMUM RATINGS

SMD Type Transistors PNP Transistors 2SA812 Features High DC Current Gain: hFE = 200 TYP. (VCE = -6.0 V, IC = -1.0 mA) High Voltage: VCEO = -50 V +0.12.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1 +0.05 -0.01 +0.10.97 -0.1

Plastic-Encapsulate Transistors FEATURES Complementary to 2SC1623 High DC Current Gain: hFE=200 TYP.(VCE=-6V,IC=-1mA) High Voltage: Vceo=-50V 2SA812(PNP) MAXIMUM RATINGS (TA=25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector