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Datasheet 2SA821 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 5 | 2SA821 | PNP Plastic Encapsulated Transistor 2SA821
Elektronische Bauelemente -0.03A , -210 V PNP Plastic Encapsulated Transistor
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
FEATURES
TO-92
G H
High Breakdown Voltage Low Transition Frequency
CLASSIFICATION OF hFE
Product-Rank 2SA821-N Range 56~120 2SA8 |
 Secos |
 |
| 4 | 2SA821 | PNP Transistor JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
2SA821
FEATURES
TRANSISTOR (PNP) TO¡ª 92
Power dissipation PCM : 0.25 W£¨ Tamb=25¡æ£© Collector current ICM: -0.03 A Collector-base voltage V(BR)CBO : -210 V Operating and storage junction temperatur |
 JIANGSU CHANGJIANG |
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| 3 | 2SA821S | HIGH VOLTAGE AMPLIFIER TRANSISTOR Transistors
2SA821S 2SC1651S
(94L-183-A35)
(94L-519-C35)
274
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The sp |
 ROHM Semiconductor |
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| 2 | 2SA821S | PNP Transistor RoHS
2SA821S
2SA821S
FEATURES Power dissipation PD: 0.25
TRANSISTOR (PNP)
TO-92S
1. EMITTER 2. COLLECTOR 3. BASE
W (Tamb=25℃)
Collector current ICM: -0.03 A Collector-base voltage V(BR)CBO : -210 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACT |
 WEJ |
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