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Datasheet 2SA562 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 2SA562 | PNP Plastic Encapsulated Transistor Elektronische Bauelemente
2SA562
-0.5A, -35V PNP Plastic Encapsulated Transistor
FEATURES
Excellent hFE Linearity
CLASSIFICATION OF hFE
Product-Rank 2SA562-O
Range
70~140
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
2SA562-Y 120~240
TO-92
REF.
A B C D E F G H |  SeCoS | transistor |
| 2 | 2SA562 | TO-92 Plastic-Encapsulate Transistors
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|  ETC | transistor |
| 3 | 2SA562 | PNP Transistor
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
2SA562
FEATURE Power dissipation PCM : 0.5
TRANSISTOR (PNP)
TO-92
1. EMITTER
W (Tamb=25℃)
2. COLLECTOR
Collector current A ICM : -0.5 Collector-base voltage V (BR) CBO: -35 V Opera |  Jiangsu Changjiang Electronics Technology | transistor |
| 4 | 2SA562 | Plastic-Encapsulated Transistors
Transys
Electronics
L I M I T E D
TO-92 Plastic-Encapsulated Transistors
2SA562
FEATURE Power dissipation PCM : 0.5
TRANSISTOR (PNP)
TO-92
1. EMITTER
W (Tamb=25℃)
2. COLLECTOR
Collector current A ICM : -0.5 Collector-base voltage V (BR) CBO: -35 V Operating and storage |  TRANSYS Electronics | transistor |
| 5 | 2SA562M | SILICON PNP TRANSISTOR 2SA562M(3CG562M)
硅 PNP 半导体三极管/SILICON PNP TRANSISTOR
用途:用于音频小功率放大，激励级放大及开关电路。
Purpose: Audio frequency low power amplifier, driver stage amplifier, switching applications.
特点:极好的 hFE 特性,与 2SC1959M(3DG1959M)互补。
Featur |  LZG | transistor |
2SA Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 2SA0683 | Transistor, Silicon PNP Epitaxial Type Transistors
2SA0683 (2SA683), 2SA0684 (2SA684)
Silicon PNP epitaxial planar type
Unit: mm
■ Features
• Allowing supply with the radial taping
■ Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) 2SA0683 2SA0684 VCEO VEBO IC ICP PC Tj Tstg Symbol VCBO Rating  Panasonic Semiconductor transistor | | |
| 2 | 2SA0684 | Transistor, Silicon PNP Epitaxial Type Transistors
2SA0683 (2SA683), 2SA0684 (2SA684)
Silicon PNP epitaxial planar type
Unit: mm
■ Features
• Allowing supply with the radial taping
■ Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) 2SA0683 2SA0684 VCEO VEBO IC ICP PC Tj Tstg Symbol VCBO Rating Panasonic Semiconductor transistor | | |
| 3 | 2SA0879 | Transistor, Silicon PNP Epitaxial Type Transistors
2SA0879 (2SA879)
Silicon PNP epitaxial planar type
For general amplification Complementary to 2SC1573 ■ Features
• High collector-emitter voltage (Base open) VCEO
0.7+0.3 –0.2
0.7±0.1
Unit: mm
5.9±0.2 4.9±0.2
■ Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base vo Panasonic Semiconductor transistor | | |
| 4 | 2SA0885 | Transistor, Silicon PNP Epitaxial Type Power Transistors
2SA0885 (2SA885)
Silicon PNP epitaxial planar type
Unit: mm
For low-frequency power amplification Complementary to 2SC1846 ■ Features
• Output of 3 W can be obtained by a complementary pair with 2SC1846 • TO-126B package which requires no insulation plate for installation t Panasonic Semiconductor transistor | | |
| 5 | 2SA0886 | Silicon PNP epitaxial planar type (For low-frequency power amplification Complementary) Power Transistors
2SA0886 (2SA886)
Silicon PNP epitaxial planar type
For low-frequency power amplification Complementary to 2SC1847
φ 3.16±0.1
3.8±0.3
Unit: mm
8.0+0.5 –0.1 3.2±0.2
■ Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter volt Panasonic Semiconductor transistor | | |
| 6 | 2SA100 | Ge PNP Drift ETC transistor | | |
| 7 | 2SA1001 | Silicon PNP Power Transistor INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification 2SA1001
DESCRIPTION ·High Current Capability ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -130V(Min.)
APPLICATIONS ·Designed for audio and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SY  Inchange Semiconductor transistor | |
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