2SA1977
NEC
PNP EPITAXIAL SILICON TRANSISTOR MICROWAVE AMPLIFIERDATA SHEET PRELIMINARY DATA SHEET
Silicon Transistor
2SA1977
PNP EPITAXIAL SILICON TRANSISTOR MICROWAVE AMPLIFIER
FEATURES
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PACKAGE DIMENSION (in millimeters)
_0.2 2.8+
0.4 +0.1 –0.05
High fT fT = 8.5 GHz TYP. High gain | S21e | = 12.0 dB TYP. @f = 1.
2SA1988
Power TransistorInchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA1988
DESCRIPTION ¡¤ With TO-3PN package ¡¤ High collector-emitter voltage APPLICATIONS ¡¤ For audio frequency power amplifier and industrial use
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter
Inchange Semiconductor
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