2SA1955FV
Toshiba
Silicon PNP Epitaxial Type Transistor2SA1955FV
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1955FV
General Purpose Amplifier Applications Switching and Muting Switch Application
• Low saturation voltage: VCE (sat) (1) = −15 mV (typ.) @IC = −10 mA/IB = −0.5 mA
• Large
2SA1955
Silicon PNP transistor2SA1955
Rev.E Mar.-2016
DATA SHEET
描述 / Descriptions SOT-23 塑封封装 PNP 半导体三极管。Silicon PNP transistor in a SOT-23 Plastic Package.
特征 / Features
低饱和,大电流。 Low saturation voltage, large collector current.
用途 / Applications 一般放大和静音开关�
BLUE ROCKET ELECTRONICS
PDF
2SA1955
SILICON PNP TRANSISTOR2SA1955(3CG1955)
硅 PNP 半导体三极管/SILICON PNP TRANSISTOR
用途:一般放大和静音开关。
Purpose: General purpose amplifier and muting switch application . 特点:低饱和,大电流。 Features: Low saturation voltage, large collector current.
极限参数/Absolute maximum rati
LZG
PDF
2SA1955
Silicon PNP Epitaxial Type TransistorTOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1955
General Purpose Amplifier Applications Switching and Muting Switch Application
2SA1955
Unit: mm
· Low saturation voltage: VCE (sat) (1) = −15 mV (typ.) @IC = −10 mA/IB = −0.5 mA
· Large collector current: IC = −400 mA (m
Toshiba Semiconductor
PDF