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Datasheet 2SA1930 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | 2SA1930 | Silicon PNP Power Transistor INCHANGE Semiconductor
isc Silicon PNP Power Transistor
DESCRIPTION ·High Transition Frenquency : fT=200MHz(Typ.) ·Complementary to 2SC5171
APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications
isc Product Specification
2SA1930
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMB |
 Inchange Semiconductor |
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| 3 | 2SA1930 | TRANSISTOR (POWER/ DRIVER STAGE AMPLIFIER APPLICATIONS) 2SA1930
TOSHIBA Transistor Silicon PNP Epitaxial Type
2SA1930
Power Amplifier Applications Driver Stage Amplifier Applications
Unit: mm
• •
High transition frequency: fT = 200 MHz (typ.) Complementary to 2SC5171
Absolute Maximum Ratings (Tc = 25°C)
Characteristics Collector-base voltage Col |
 Toshiba Semiconductor |
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| 2 | 2SA1930 | SILICON PNP TRANSISTOR 2SA1930(3CA1930)
硅 PNP 半导体三极管/SILICON PNP TRANSISTOR
用途:用于一般功率放大和驱动级放大。
Purpose: General power and driver stage amplifier applications.
特点：特征频率高，与 2SC5171(3DA5171)互补。
Features: High fT, complementary pair with 2SC5171(3DA51 |
 LZG |
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| 1 | 2SA1930 | Trans GP BJT PNP 180V 2A 3-Pin(3+Tab) TO-220NIS |
 New Jersey Semiconductor |
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