2SA1905
Toshiba Semiconductor
Silicon PNP Epitaxial Type TransistorTOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA1905
High-Current Switching Applications.
2SA1905
Unit: mm
• Low collector saturation voltage: VCE (sat) = −0.4 V (max) • High speed switching time: tstg = 1.0 μs (typ.) • Complementary
2SA1988
Power TransistorInchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA1988
DESCRIPTION ¡¤ With TO-3PN package ¡¤ High collector-emitter voltage APPLICATIONS ¡¤ For audio frequency power amplifier and industrial use
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter
Inchange Semiconductor
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2SA1988
SILICON POWER TRANSISTORSavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA1988
DESCRIPTION ·With TO-3PN package ·High collector-emitter voltage APPLICATIONS ·For audio frequency power amplifier and industrial use
PINNING PIN 1 2 3 Base Collector;connected to mounting b
SavantIC
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