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Datasheet 2SA1832 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 6 | 2SA1832 | TRANSISTOR (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS) 2SA1832
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1832
Audio Frequency General Purpose Amplifier Applications
High voltage and high current: VCEO = −50 V, IC = −150 mA (max) • Excellent hFE linearity: hFE (IC = −0.1 mA)/ hFE (IC = −2 mA) = 0.95 (typ.) • • • High |
 Toshiba Semiconductor |
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| 5 | 2SA1832 | PNP Silicon Plastic Encapsulated Transistor 2SA1832
Elektronische Bauelemente -0.15A , -50V PNP Silicon Plastic Encapsulated Transistor
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
FEATURES
High Voltage and High Current Excellent hFE Linearity Complementary to 2SC4738
A
M
3
SOT-523
3
CLASSIFICATIO |
 Secos |
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| 4 | 2SA1832 | PNP TRANSISTOR 2SA1832
PNP TRANSISTOR
P b Lead(Pb)-Free
FEATURES: * High voltage and high current * Excellent hFE linearity * Complementary to 2SC4738
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Parameter Symbol VCBO VCEO VEBO IC PD RθJA TJ Tstg Value -50 -50 -5 -150 100 125 -55 to +125 -55 to +125 Units V |
 WEITRON |
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| 3 | 2SA1832 | PNP TRANSISTOR RoHS
2SA1832
2SA1832
FEATURES Power dissipation PCM
SOT-523
TRANSISTOR (PNP)
1. BASE 2. EMITTER 3. COLLECTOR
: 0.1
W (Tamb=25℃)
Collector current ICM : -0.15 A Collector-base voltage V(BR)CBO : -50 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃
ELECTRICAL CHAR |
 WEJ |
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