|
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1789 DESCRIPTION ·With TO-247 package ·Complement to type 2SC4653 ·Low collector saturation voltage APPLICATIONS ·For audio output applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DE
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SA1788 DESCRIPTION ·With TO-247 package ·Complement to type 2SC4652 APPLICATIONS ·For audio output applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Abso
INCHANGE Semiconductor isc Silicon PNP Power Transistor isc Product Specification 2SA1744 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -60V(Min) ·High DC Current Gain- : hFE= 100(Min)@ (VCE= -2V , IC= -3A) ·Low Saturation Voltage- : VCE(sat)= -0.3V(Max)@ (IC= -8A, IB= -0.4A)
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SA1771 DESCRIPTION ·With TO-220F package ·Low collector saturation voltage ·High speed switching time APPLICATIONS ·High current switching PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified
DATA SHEET SILICON TRANSISTOR 2SA1714 PNP SILICON EPITAXIAL POWER TRANSISTOR (DARLINGTON CONNECTION) FOR HIGH-SPEED SWITCHING The 2SA1714 is a high-speed darlington power transistor. This transistor is ideal for high-precision control such as PWM control for pulse mortors or blushless mortor of O
Ordering number : EN3096A 2SA1709/2SC4489 Bipolar Transistor (-)100V, (-)2A, Low VCE(sat), (PNP)NPN Single NMP http://onsemi.com Features • Adoption of FBET, MBIT processes • Fast switching speed • High breakdown voltage, large current capacity ( )2SA1709 Specifications Absolute Maximum
|
사이트 맵 |
0 1 2 3 4 5 6 7 8 9 A B C |
PartNumber.co.kr | 2020 | 연락처 |