2SA1611
SeCoS
PNP Silicon Plastic Encapsulated Transistor2SA1611
Elektronische Bauelemente -0.1A , -60V PNP Silicon Plastic Encapsulated Transistor
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
FEATURES
High DC Current Gain High Voltage Complementary to 2SC4177
A
3
SOT-323
2SA1611
TRANSYS
TransistorTransys
Electronics
L I M I T E D
SOT-323 Plastic-Encapsulated Transistors
SOT-323
2SA1611
FEATURES Power dissipation PCM
TRANSISTOR (PNP)
1. BASE 2. EMITTER 3. COLLECTOR
1. 25¡ À0. 05
1. 01 R EF
: 0.15
W (Tamb=25℃)
2. 30¡ À0. 05
Collector current
2SA1611
Kexin
TransistorSMD Type
PNP Silicon Epitaxia 2SA1611
Transistors IC
Features
High DC Current Gain. High Voltage.
1 Emitter 2 Base 3 Collector
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector curren
2SA1611
Jin Yu Semiconductor
Transistor2SA1 61 1
TRANSISTOR(PNP)
FEATURES High DC Current Gain High Voltage Complementary to 2SC4177 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol VCBO VCEO VEBO IC PC RΘJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emi
2SA1611
TY Semiconductor
TransistorProduct specification
2SA1611
Features
High DC Current Gain. High Voltage.
1 Emitter 2 Base 3 Collector
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipati
2SA1611W
Galaxy Semi-Conductor
PNP Silicon Epitaxial Planar TransistorBL Galaxy Electrical
PNP Silicon Epitaxial Planar Transistor
FEATURES
z z z z High voltage VCEO=-50V. Excellent HFE Linearity. High DC current gain : hFE=200 typ. Complementary to 2SC4177.
Production specification
2SA1611W
Pb
Lead-free
APPLICATIONS
z Audio