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SMD Type Silicon PNP Epitaxial 2SA1468 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors Unit: mm Features +0.1 2.4-0.1 High voltage amplifier. +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 P
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SA1488 2SA1488A DESCRIPTION ·With TO-220F package ·Complement to type 2SC3851/3851A APPLICATIONS ·Audio and general purpose PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220
Product specification 2SA1434 Features Adoption of FBET process. High DC current gain (hFE=500 to 1200). +0.1 2.4-0.1 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Unit: mm Low collector-to-emitter saturation voltage (VCE(sat) 0.5V). High VEBO (VEBO 15V). +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55
SMD Type Transistors IC PNP Epitaxial Planar Silicon Transistor 2SA1434 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Features Adoption of FBET process. High DC current gain (hFE=500 to 1200). +0.1 2.4-0.1 Unit: mm Low collector-to-emitter saturation voltage (VCE(sat) 0.5V). High VEBO (VEBO 15V). +0.1 1.3-0
2SA1458 PNP Silicon Epitaxial Planar Transistor for general purpose amplifier and high speed switching applications. The transistor is subdivided into three groups M, Land K, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.
Product specification 2SA1463 Features High speed,high voltage switching. Low Collector Saturation Voltage Absolute Maximum Ratings Ta = 25 Parameter Collector to base voltage Collecto to emitter voltage Emitter to base voltage Collector current(DC) Collector current(Pulse)* Total power dissipati
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