2SA1419
ON Semiconductor
Bipolar TransistorOrdering number : EN2007C
2SA1419/2SC3649
Bipolar Transistor
(–)160V, (–)1.5A, Low VCE(sat), (PNP)NPN Single PCP
http://onsemi.com
Features
• Adoption of FBET, MBIT processes
• High breakdown voltage and large current capacity
• Ultrasmall size ma
2SA1419
Sanyo Semicon Device
PNP/NPN Epitaxial Planar Silicon TransistorsOrdering number:ENN2007A
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1419/2SC3649
High-Voltage Switching Applications
Features
· Adoption of FBET, MBIT processes. · High breakdown voltage and large current capacity. · Ultrasmall size making it easy to
2SA1419
Kexin
TransistorSMD Type
High-Voltage Switching Applications 2SA1419
Transistors
Features
Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity
Absolute Maximum Ratings Ta = 25
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-
2SA1419
TY Semiconductor
TransistorSMD Type
Product specification
2SA1419
Features
Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity
Absolute Maximum Ratings Ta = 25
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Cur