2SA1316
Toshiba Semiconductor
Silicon PNP Epitaxial Type TransistorTOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1316
For Low Noise Audio Amplifier Applications and Recommended for the First Stages of MC Head Amplifiers
2SA1316
Unit: mm
· Very low noise in the region of low signal source impedance equivale
2SA1388
POWER TRANSISTORInchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA1388
DESCRIPTION ·With TO-220Fa package ·Low collector saturation voltage ·High speed switching time ·Complementary to 2SC3540
APPLICATIONS
·
·High current switching applications
PINNING PIN 1 2 3 DESCRIPTION E
Inchange Semiconductor
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2SA1338
TransistorsProduct specification
2SA1338
SOT-23
Unit: mm
Adoption of FBET process.
+0.1 2.4-0.1
High breakdown voltage : VCEO=-50V. Large current capacitiy and high fT. Ultrasmall-sized package permitting sets to be smallsized, slim.
+0.1 1.3-0.1
1
+0.1 0.95-0.1 +0.1 1.9-0.1
2
0.55
0.4
Features
+0.1
TY Semiconductor
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