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Datasheet 2SA1259 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | 2SA1259 | Silicon PNP Power Transistors INCHANGE Semiconductor
isc Silicon PNP Darlington Power Transistor
DESCRIPTION ·High DC Current Gain-
: hFE = 2000(Min)@ IC= -2.5A ·Low Collector-Emitter Saturation Voltage
: VCE(sat) = -1.5V(Max)@ IC= -2.5A ·Complement to Type 2SC3145
isc Product Specification
2SA1259
APPLICATIONS ·Designed f |
 Inchange Semiconductor |
 |
| 1 | 2SA1259 | PNP/NPN Epitaxial Planar Silicon Darlington Transistors Ordering number:ENN1059D
PNP/NPN Epitaxial Planar Silicon Darlington Transistors
2SA1259/2SC3145
60V/5A for High-Speed Drivers Applications
Features
· High fT. · High switching speed. · Wide ASO.
Package Dimensions
unit:mm
2010C
[2SA1259/2SC3145]
10.2 3.6 5.1
4.5 1.3
2.7 6.3
15.1
18.0 |
 Sanyo Semicon Device |
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