2SA1242
Toshiba Semiconductor
Silicon PNP Epitaxial Type TransistorTOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1242
Strobe Flash Applications Medium Power Amplifier Applications
2SA1242
Unit: mm
• Excellent hFE linearity : hFE (1) = 100 to 320 (VCE = −2 V, IC = −0.5 A) : hFE (2) = 70 (min) (VCE = �
2SA1242
Inchange Semiconductor
Silicon PNP Power Transistorisc Silicon PNP Power Transistor
INCHANGE Semiconductor
2SA1242
DESCRIPTION ·hFE=100-320(IC= -0.5A; VCE= -2V) ·hFE=70(Min)(IC= -4A; VCE= -2V) ·Low Collector-Emitter Saturation Voltage-
: VCE(sat)= -1.0V(Max)( IC= -4A; IB= -0.1A) ··High Power Dissipation