2SA1235A
Isahaya Electronics Corporation
(2SAxxxx) SILICON PNP EPITAXIAL TYPE< SMALL-SIGNAL TRANSISTOR >
2SA1235A
2SA1602A 2SA1993
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE(Super mini type) FEATURE ・ Super mini package for easy mounting OUTLINE DRAWING
2SA1602A
2.1 0.425 1.25 0.425 0.5
Unit:mm
2SA123
2SA1235A
TRANSYS Electronics Limited
Plastic-Encapsulated TransistorsTransys
Electronics
L I M I T E D
SOT-23-3L Plastic-Encapsulated Transistors
2SA1235A
FEATURES Power dissipation PCM : 0.2 W (Tamb=25℃)
TRANSISTOR (PNP)
SOT-23-3L
1. BASE 2. EMITTER 3. COLLECTOR
1. 02
Collector current -0.2 A ICM : Collector-base voltage
2SA1235A
ETC
PNP TRANSISTOR˾ ¶«Ý¸
DONG GUAN SHI HUA YUAN ELECTRON CO.,LTD.
TEL 86-769-5335378 86-769-5305266 FEX 86-769-5316189
SOT¡ª 23
2SA1235A
FEATURES
TRANSISTOR£¨PNP £©
1. BASE 2. EMITTER 3. COLLECTOR
Power dissipation PCM : 0.2 W£¨ Tamb=25¡æ£© Collector cur
2SA1235A
Galaxy Semi-Conductor
Silicon Epitaxial Planar TransistorBL Galaxy Electrical
Silicon Epitaxial Planar Transistor
FEATURES
z Small collector to emitter saturation voltage VCE(sat)=-0.3V max(@IC=-100mA,IB=-10mA). z z Excellent lineary DC forward current gain. Super mini package for easy mounting.
Production specific