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2SA1213-G  

Comchip
Comchip

2SA1213-G

General Purpose Transistor

General Purpose Transistor 2SA1213-G Series (PNP) RoHS Device Features -Small flat package. -Power amplifier and switching -applications. -Low saturation voltage. -High speed switching time. Maximum Ratings (at TA=25°C unless otherwise noted) Parameter Sy




관련 부품 2SA1213 상세설명

2SA1213  

  
Silicon PNP Epitaxial Type Transistor

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1213 Power Amplifier Applications Power Switching Applications 2SA1213 Unit: mm • Low saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High speed switching time: tstg = 1.0 μs (typ.) • Small flat package • PC = 1



Toshiba Semiconductor
Toshiba Semiconductor

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