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2SA1213 전자부품 데이터시트



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2SA1213  

Toshiba Semiconductor
Toshiba Semiconductor

2SA1213

Silicon PNP Epitaxial Type Transistor

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1213 Power Amplifier Applications Power Switching Applications 2SA1213 Unit: mm • Low saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High speed switching time: tstg = 1.0 μs



2SA1213-G  

Comchip
Comchip

2SA1213-G

General Purpose Transistor

General Purpose Transistor 2SA1213-G Series (PNP) RoHS Device Features -Small flat package. -Power amplifier and switching -applications. -Low saturation voltage. -High speed switching time. Maximum Ratings (at TA=25°C unless otherwise noted) Parameter Sy



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