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MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2SA1201-O 2SA1201-Y Features • • • • Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Po
Transys Electronics L I M I T E D SOT-89 Plastic-Encapsulated Transistors 2SA1201 FEATURES Power dissipation PCM : 500 mW (Tamb=25℃) 2. COLLECTOR 3. EMITTER 1 2 3 TRANSISTOR (PNP) SOT-89 1. BASE Collector current : -800 mA ICM Collector-base voltage V V(BR)CBO : -120 Operating and storage junc
UNISONIC TECHNOLOGIES CO., LTD 2SA1201 PNP SILICON TRANSISTOR SILICON PNP EPITAXIAL TRANSISTOR DESCRIPTION The UTC 2SA1201 is designed for power amplifier and voltage amplifier applications. FEATURES *High voltage: VCEO= -120V *High transition frequency: fT=120MHz(typ.) *Pc=1 to 2 W(mounte
2SA1 201 TRANSISTOR(PNP) FEATURES z High voltage z High transition frequency z Complementary to 2SC2881 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous
SMD Type Voltage Amplifier Applications 2SA1201 Transistors Features High Voltage : VCEO = -120V High Transition Frequency : fT = 120MHz(typ.) Small Flat Package Complementary to 2SC2881 Absolute Maximum Ratings Ta = 25 Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Volta
2SA1201 PNP Silicon Elektronische Bauelemente RoHS Compliant Product Epitaxial Planar Transistor SOT-89 FEATURES z High voltage z High transition frequency z Complementary to 2SC2881 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Volt
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