Datasheet 2N7002KDW-AU Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	2N7002KDW-AU	60V N-Channel Enhancement Mode MOSFET 2N7002KDW-AU 60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), [email protected],IDS@200mA=4Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Very Low Leakage Current In Off Condition • Special	Pan Jit International

2N7002KDW Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
2N7002KDW	N-channel MOSFET JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate MOSFETS 2N7002KDW N-channel MOSFET V(BR)DSS 60 V RDS(on)MAX 5Ω@10V 5.3Ω@4.5V ID 340mA SOT-363  6 5 4 1 2 3 FEATURE z High density cell design for Low RDS（on） z Voltage cont	JCET
2N7002KDW-AU	60V N-Channel Enhancement Mode MOSFET 2N7002KDW-AU 60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), [email protected],IDS@200mA=4Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Very Low Leakage Current In Off C	Pan Jit International
2N7002KDW	60V N-Channel Enhancement Mode MOSFET 2N7002KDW 60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), [email protected],IDS@200mA=4Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Very Low Leakage Current In Off Co	Pan Jit International

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Número de pieza	Descripción	Fabricantes	PDF
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