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Datasheet 2N7002DW Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 7 | 2N7002DW | Dual N-channel MOSFET JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-363 Plastic-Encapsulate MOSFETs
2N7002DW
V(BR)DSS
60 V
Dual N-channel MOSFET
RDS(on)MAX
5Ω@10V
7Ω@5V
FEATURE z High density cell design for low RDS(ON) z Voltage controlled small signal switch
z Rugged and reliable
z High saturation |
 JCET |
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| 6 | 2N7002DW | DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR NEW PRODUCT
2N7002DWA
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS 60V
RDS(ON)
8Ω @ VGS = 5V 6Ω @ VGS = 10V
Package SOT363
ID TA = +25°C
170mA
200mA
Description
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior |
 Diodes Incorporated |
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| 5 | 2N7002DW | Dual N-Channel MOSFET 2N7002DW
Dual N-Channel MOSFET
3 2 1
6 5
4
Features:
*Low On-Resistance : 7.5 Ω *Low Input Capacitance: 22PF *Low Out put Capacitance : 11PF *Low Threshole :1 .5V(TYE) *Fast Switching Speed : 11ns
1
2
3
4
5
6
SOT-363(SC-88)
Mechanical Data:
*Case: SOT-363, Molded Plastic *Case Material- |
 Weitron Technology |
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| 4 | 2N7002DW | N-Channel Enhancement Mode Field Effect Transistor 2N7002DW — N-Channel Enhancement Mode Field Effect Transistor
January 2015
2N7002DW N-Channel Enhancement Mode Field Effect Transistor
Features
• Dual N-Channel MOSFET • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output |
 Fairchild Semiconductor |
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