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2N7002BKMB 83B 60 V, single N-channel Trench MOSFET Rev. 2 — 13 June 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trenc
2N7002BKV 60 V, 340 mA dual N-channel Trench MOSFET Rev. 2 — 22 September 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET tech
2N7002B N-Channel Enhancement Mode MOSFET High Speed Switching Application Features ESD rating: 2000V (HBM) Low On-Resistance: RDS(on) < 3Ω @ VGS = 10V High power and current handling capability Very fast switching RoHS compliant device Applications High speed line drive
2N7002BKT 60 V, 290 mA N-channel Trench MOSFET Rev. 1 — 15 June 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 F
2N7002BKW 60 V, 310 mA N-channel Trench MOSFET Rev. 1 — 17 June 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 F
2N7002BK 60 V, 350 mA N-channel Trench MOSFET Rev. 1 — 17 June 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2
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