2N7001 전자부품 데이터시트

UNISONIC TECHNOLOGIES CO., LTD 2N7002KW 300mA, 60V N-CHANNEL ENHANCEMENT MODE MOSFET  DESCRIPTION The UTC 2N7002KW uses advanced technology to provide excellent RDS(ON), low gate charge and low gate voltages during operation. This device is suitable for use as a load switch or in PWM applicatio

Supertex inc. 2N7000 N-Channel Enhancement-Mode Vertical DMOS FETs Features ►►Free from secondary breakdown ►►Low power drive requirement ►►Ease of paralleling ►►Low CISS and fast switching speeds ►►Excellent thermal stability ►►Integral source-drain diode ►►High input

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 2N7081 DESCRIPTION ·TO–220 ISOLATED HERMETIC PACKAGE ·LOW RDS(ON) ·SIMPLE DRIVE REQUIREMENTS APPLICATIONS ·Automotive power actuator drivers ·Motor controls ·DC-DC converters ABSOLUTE MAXIMUM RATINGS(Ta=25�

Elektronische Bauelemente 2N7002KW 115mA , 60V, RDS(ON) 4  N-Ch Small Signal MOSFET with ESD Protection RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES  RDS(ON), VGS@10V, IDS@500mA=3  RDS(ON), [email protected], IDS@200mA=4  Advanced Trench Process Techn

Features • Dual N-Channel MOSFET • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) • Halogen and Antimony Free. “G