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Elektronische Bauelemente 2N7002KW 115mA , 60V, RDS(ON) 4 N-Ch Small Signal MOSFET with ESD Protection RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES RDS(ON), VGS@10V, IDS@500mA=3 RDS(ON), [email protected], IDS@200mA=4 Advanced Trench Process Techn
2N7002BKMB 83B 60 V, single N-channel Trench MOSFET Rev. 2 — 13 June 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trenc
Features • Dual N-Channel MOSFET • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) • Halogen and Antimony Free. “G
SPICE MODEL: 2N7002V/VA 2N7002V/VA DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features · · · · · · · · Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Lead F
2N7002V / 2N7002VA — N-Channel Enhancement Mode Field Effect Transistor January 2015 2N7002V / 2N7002VA N-Channel Enhancement Mode Field Effect Transistor Features • Dual N-Channel MOSFET • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed
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