|
|
Datasheet 2N6668 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 7 | 2N6668 | Silicon PNP Power Transistor INCHANGE Semiconductor
isc Silicon PNP Darlington Power Transistor
isc Product Specification
2N6668
DESCRIPTION ·High DC Current Gain-
: hFE = 1000(Min)@ IC= -5A ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = -80V(Min) ·Low Collector-Emitter Saturation Voltage-
: VCE(sat) = -2.0V(Max)@ IC |
 Inchange Semiconductor |
 |
| 6 | 2N6668 | SILICON PNP POWER DARLINGTON TRANSISTOR 2N6668
SILICON PNP POWER DARLINGTON TRANSISTOR
s s s
SGS-THOMSON PREFERRED SALESTYPE PNP DARLINGTON INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE
APPLICATIONS: GENERAL PURPOSE SWITCHING s GENERAL PURPOSE SWITCHING AND AMPLIFIER
s
3 1 2
TO-220
INTERNAL SCHEMATIC DIAGRAM
R1(typ) = 8 kΩ
R2(t |
 STMicroelectronics |
|
| 5 | 2N6668 | DARLINGTON POWER TRANSISTORS(PNP SILICON )
2N6667, 2N6668 Darlington Silicon Power Transistors
Designed for general−purpose amplifier and low speed switching applications.
• High DC Current Gain − • • • • • •
hFE = 3500 (Typ) @ IC = 4.0 Adc Collector−Emitter Sustaining Voltage − @ 200 mAdc VCEO(sus |
 ON Semiconductor |
|
| 4 | 2N6668 | POWER TRANSISTORS(65W) A
A
A
|
 Mospec Semiconductor |
|
| Esta página es del resultado de búsqueda del 2N6668. Si pulsa el resultado de búsqueda de 2N6668 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Enlace url :
[1] [2]
nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
 Sanken |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |