2N6667
Motorola Semiconductors
(2N6667 / 2N6668) DARLINGTON POWER TRANSISTORS(PNP SILICON)
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by 2N6667/D
2N6609 (See 2N3773)
Darlington Silicon Power Transistors
. . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gai
2N6667
ON Semiconductor
DARLINGTON POWER TRANSISTORS(PNP SILICON )
2N6667, 2N6668 Darlington Silicon Power Transistors
Designed for general−purpose amplifier and low speed switching applications.
• High DC Current Gain − • • • • • •
hFE = 3500 (Typ) @ IC = 4.0 Adc Collector−Emitter Su
2N6667
Inchange Semiconductor
Silicon PNP Power TransistorINCHANGE Semiconductor
isc Silicon PNP Darlington Power Transistor
isc Product Specification
2N6667
DESCRIPTION ·High DC Current Gain-
: hFE = 1000(Min)@ IC= -5A ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = -60V(Min) ·Low Collector-Emitter Saturat