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2N6667  

Motorola Semiconductors
Motorola Semiconductors

2N6667

(2N6667 / 2N6668) DARLINGTON POWER TRANSISTORS(PNP SILICON)

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N6667/D 2N6609 (See 2N3773) Darlington Silicon Power Transistors . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gai



2N6667  

ON Semiconductor
ON Semiconductor

2N6667

DARLINGTON POWER TRANSISTORS(PNP SILICON )

2N6667, 2N6668 Darlington Silicon Power Transistors Designed for general−purpose amplifier and low speed switching applications. • High DC Current Gain − • • • • • • hFE = 3500 (Typ) @ IC = 4.0 Adc Collector−Emitter Su



2N6667  

Boca Semiconductor Corporation
Boca Semiconductor Corporation

2N6667

PLASTIC MEDIUM-POWER SILICON TRANSISTORS




2N6667  

Mospec Semiconductor
Mospec Semiconductor

2N6667

POWER TRANSISTORS(65W)

A A A



2N6667  

Inchange Semiconductor
Inchange Semiconductor

2N6667

Silicon PNP Power Transistor

INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor isc Product Specification 2N6667 DESCRIPTION ·High DC Current Gain- : hFE = 1000(Min)@ IC= -5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -60V(Min) ·Low Collector-Emitter Saturat



2N6667  

New Jersey Semiconductor
New Jersey Semiconductor

2N6667

Trans Darlington PNP 60V 10A 3-Pin(3+Tab) TO-220 Box




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