2N6666
Inchange Semiconductor
Silicon PNP Darlington Power TransistorINCHANGE Semiconductor
isc Silicon PNP Darlington Power Transistor
isc Product Specification
2N6666
DESCRIPTION ·High DC Current Gain-
: hFE = 1000(Min)@ IC= -3A ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = -40V(Min) ·Low Collector-Emitter Saturat