2N6661
Vishay Siliconix
N-Channel 90 V (D-S) MOSFET2N6661, 2N6661-2, 2N6661JANTX, 2N6661JANTXV
www.vishay.com
Vishay Siliconix
N-Channel 90 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () at VGS = 10 V Configuration
90 4 Single
TO-205AD (TO-39)
S 1
2 G
3 D
Top View
ORDERING INFORMATION
PART 2N6
2N6661
Seme LAB
N-CHANNEL ENHANCEMENT MODE POWER MOSFETN-CHANNEL ENHANCEMENT MODE POWER MOSFET
2N6661
• VDSS = 90V , ID = 0.9A, RDS(ON) = 4.0Ω • Fast Switching • Low Threshold Voltage (Logic Level) • Low CISS • Integral Source-Drain Body Diode • Hermetic Metal TO39 Package • High Reliability Scree
2N6661
Microchip
N-Channel Enhancement-Mode Vertical DMOS FET2N6661
N-Channel, Enhancement-Mode, Vertical DMOS FET
Features
• Free from secondary breakdown • Low power drive requirement • Ease of paralleling • Low CISS and fast switching speeds • Excellent thermal stability • Integral source-drain diode �
2N6661
Motorola Inc
TMOS SWITCHING FET TRANSISTORS2N6659 MPF6659 2N6660 MPF6660 2N6661 MPF6661
N-CHANNEL ENHANCEMENT-MODE TMOS POWER FIELD-EFFECT TRANSISTOR
These TMOS Power FETs are designed. for high-current, high-
speed power switching applications such as switching power sup-
plies, ,CMOS logic, micropr
2N6661-2
Vishay
N-Channel 90 V (D-S) MOSFET2N6661, 2N6661-2, 2N6661JANTX, 2N6661JANTXV
www.vishay.com
Vishay Siliconix
N-Channel 90 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () at VGS = 10 V Configuration
90 4 Single
TO-205AD (TO-39)
S 1
2 G
3 D
Top View
ORDERING INFORMATION
PART 2N6