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Datasheet 2N6500 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | 2N6500 | Bipolar NPN Device 2N6500
Dimensions in mm (inches).
3.68 (0.145) rad.
max.
3.61 (0.142) 4.08(0.161)
rad.
12
6.35 (0.250) 8.64 (0.340)
Bipolar NPN Device in a Hermetically sealed TO66
Metal Package.
Bipolar NPN Device. VCEO = 110V IC = 4A
24.13 (0.95) 24.63 (0.97) 14.48 (0.570) 14.99 (0.590)
0.71 (0.028) 0.86 |
 Seme LAB |
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| 3 | 2N6500 | HIGH SPEED EPITAXIAL COLLECTOR SILICON NPN PLANAR TRANSISTORS |
 ETC |
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| 2 | 2N6500 | Silicon Power Transistor SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2N6500
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DESCRIPTION With TO-66 package ·Wide area of operation ·High sustaining voltage APPLICATIONS ·For high-speed switching and linearamplifier applications
PINNING (See Fig.2) PIN 1 2 3 Base E |
 SavantIC |
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| 1 | 2N6500 | Trans GP BJT PNP 90V 4A 3-Pin(2+Tab) TO-66 |
 New Jersey Semiconductor |
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