2N65 전자부품 데이터시트

UNISONIC TECHNOLOGIES CO., LTD 2N65 2A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 2N65 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a hig

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 2N65 ·FEATURES ·Drain Current ID= 2A@ TC=25℃ ·Drain Source Voltage- : VDSS= 650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 5.0Ω(Max) ·Fast Switching ·APPLICAT

UNISONIC TECHNOLOGIES CO., LTD 2N65-C 2A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 2N65-C is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a

2N6500 Dimensions in mm (inches). 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. 12 6.35 (0.250) 8.64 (0.340) Bipolar NPN Device in a Hermetically sealed TO66 Metal Package. Bipolar NPN Device. VCEO = 110V IC = 4A 24.13 (0.95) 24.63 (0.97) 14.48

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2N6500 · DESCRIPTION With TO-66 package ·Wide area of operation ·High sustaining voltage APPLICATIONS ·For high-speed switching and linearamplifier applicati