2N6387
Motorola Semiconductors
(2N6387 / 2N6388) DARLINGTON NPN SILICON POWER TRANSISTORS
MOTOROLA SEMICONDUCTOR TECHNICAL DATA
Order this document by 2N6387/D
Plastic Medium-Power Silicon Transistors
. . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2500
2N6387
ON Semiconductor
DARLINGTON NPN SILICON POWER TRANSISTORS
2N6387, 2N6388
2N6388 is a Preferred Device
Plastic Medium−Power Silicon Transistors
These devices are designed for general−purpose amplifier and low−speed switching applications.
Features http://onsemi.com
• High DC Current Gain
2N6387
CDIL
NPN PLASTIC MEDIUM DARLINGTON POWER TRANSISTORSContinental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN PLASTIC MEDIUM DARLINGTON POWER TRANSISTORS
2N6387 2N6388
TO-220 Plastic Package
Designed for General Purpose Amplifier and Low Speed Switching Applications
ABSOL
2N6387
STMicroelectronics
SILICO NPN POWER DARLINGTON TRANSISTORS2N6387 2N6388
SILICO NPN POWER DARLINGTON TRANSISTORS
s 2N6388 IS SGS-THOMSON PREFERRED SALESTYPE
s NPN DARLINGTON s HIGH CURRENT CAPABILITY s INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
DESCRIPTION The 2N6387 and 2N6388 are silicon epitaxial-base NPN po
2N6387
SavantIC
Silicon NPN Power TransistorsSavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2N6386 2N6387 2N6388
DESCRIPTION ·With TO-220C package ·Complement to type 2N6666/6667/6668 ·DARLINGTON ·High DC current gain ·Low collector saturation voltage
APPLICATIONS ·De