2N6298
Seme LAB
Bipolar PNP Device2N6298
Dimensions in mm (inches).
3.68 (0.145) rad.
max.
3.61 (0.142) 4.08(0.161)
rad.
12
6.35 (0.250) 8.64 (0.340)
Bipolar PNP Device in a Hermetically sealed TO66
Metal Package.
Bipolar PNP Device. VCEO = 60V IC = 8A
24.13 (0.95) 24.63 (0.97) 14.48 (
2N6298
Central Semiconductor
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS2N6298 2N6299 PNP 2N6300 2N6301 NPN
COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6298 series devices are complementary silicon Darlington power transistors manufactured by the
2N6298
Microsemi
PNP DARLINGTON POWER SILICON TRANSISTORTECHNICAL DATA
PNP DARLINGTON POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/540
Devices
2N6298
2N6299
Qualified Level
JAN JANTX JANTXV
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
2N6298
Savantic
Silicon PNP Power TransistorsSavantIC Semiconductor
Silicon PNP Power Transistors
DESCRIPTION ·With TO-66 package ·DARLINGTON ·Low collector saturation voltage ·Complement to type 2N6300/6301
APPLICATIONS ·General purpose power amplifier and
low frequency switching applications
PINNI