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PNP Epitaxial Silicon Transistor FEATURES z DC Curent Gain Specified to 7A. z Collector-Emitter Sustaining Voltage. z High Current Gain. Pb Lead-free Production specification 2N6107 TO-220AB MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value
2N6107 2N6292 MECHANICAL DATA Dimensions in mm 2.74 15.11 8.76 10.29 5.14 3.61 Dia. 1.26 6.35 4.57 1 23 13.51 HIGH SPEED MEDIUM POWER COMPLEMENTARY PAIR TRANSISTORS FEATURES • Silicon Planar Epitaxial Base Transistors • Medium Power Switching • Linear Applications 2.54 Pin 1 – Bas
2N6107 2N6109 2N6111 PNP 2N6288 2N6290 2N6292 NPN COMPLEMENTARY SILICON POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6107, 2N6288 series types are complementary silicon power transistors, manufactured by the epitaxial base process, designed for gen
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION ·With TO-220 package ·Complement to NPN type: 2N6288; 2N6290 ;2N6292 APPLICATIONS ·Power amplifier and switching circuits applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting bas
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