2N6088 전자부품 데이터시트

DIGITRON SEMICONDUCTORS 2N6068, A, B-2N6075,A, B SENSITIVE GATE TRIACS Available Non-RoHS (standard) or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. MAXIMUM RATINGS Rating Repetitive pe

Bipolar Transistor Features: •  High DC Current Gain •  Collector-Emitter Sustaining Voltage: V = 100V Min •  Monolithic Construction with Built-in Base-Emitter Shunt Resistors Absolute Maximum Ratings: Parameters Collector Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Co

UNISONIC TECHNOLOGIES CO., LTD 2N60L 2A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION 1 1 Power MOSFET TO-220 The UTC 2N60L is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche

INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION ·High DC Current Gain- : hFE = 1000(Min)@ IC= -3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -100V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = -2.0V(Max)@ IC= -3A ·Complement to Type 2N6045