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Datasheet 2N6059 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 8 | 2N6059 | COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS 2N6050 2N6051 2N6052 PNP 2N6057 2N6058 2N6059 NPN
COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6050, 2N6057 series types are complementary silicon Darlington power transistors, manufactured by the epitaxial base pro |
 Central Semiconductor |
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| 7 | 2N6059 | SILICON NPN POWER DARLINGTON TRANSISTOR 2N6059
SILICON NPN POWER DARLINGTON TRANSISTOR
s s s s s s
SGS-THOMSON PREFERRED SALESTYPE HIGH GAIN NPN DARLINGTON HIGH CURRENT HIGH DISSIPATION INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE
APPLICATIONS s LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The 2N6059 is a silicon epitaxial-b |
 STMicroelectronics |
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| 6 | 2N6059 | DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS
ON Semiconductort PNP
Darlington Complementary Silicon Power Transistors
. . . designed for general−purpose amplifier and low frequency switching applications.
2N6052*
NPN
• High DC Current Gain — • • w
hFE = 3500 (Typ) @ IC = 5.0 Adc Collector−Emitter Sustaining |
 ON Semiconductor |
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| 5 | 2N6059 | POWER TRANSISTORS(12A/150W) A
A
A
A
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 Mospec Semiconductor |
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