2N6052
Comset Semiconductors
(2N6050 - 2N6052) POWER COMPLEMENTARY SILICON TRANSISTORSPNP 2N6050 – 2N6051 – 2N6052 POWER COMPLEMENTARY SILICON TRANSISTORS
The 2N6050, 2N6051 and 2N6052 are silicon epitaxial-base transistors in monolithic Darlington configuration mounted in Jedec TO-3 metal case. They are inteded for use in power linear and
2N6052
Microsemi Corporation
(2N6051 / 2N6052) PNP DARLINGTON POWER SILICON TRANSISTORTECHNICAL DATA
PNP DARLINGTON POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/501 Devices 2N6051 2N6052 Qualified Level JAN JANTX JANTXV
MAXIMUM RATINGS Ratings
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector
2N6052
Micrel Semiconductor
(2N6051 / 2N6052) PNP DARLINGTON POWER SILICON TRANSISTORTECHNICAL DATA
PNP DARLINGTON POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/501 Devices
Qualified Level 2N6052 JAN JANTX JANTXV
2N6051
MAXIMUM RATINGS Ratings
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage B
2N6052
Motorola Semiconductors
(2N6052 - 2N6059) DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS
MOTOROLA SEMICONDUCTOR TECHNICAL DATA
Order this document by 2N6052/D
Darlington Complementary Silicon Power Transistors
. . . designed for general–purpose amplifier and low frequency switching applications. • High DC Current Gain �
2N6052
Central Semiconductor
COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS2N6050 2N6051 2N6052 PNP 2N6057 2N6058 2N6059 NPN
COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS
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DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6050, 2N6057 series types are complementary silicon Darlington power transistors
2N6052
ON Semiconductor
DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS
ON Semiconductort PNP
Darlington Complementary Silicon Power Transistors
. . . designed for general−purpose amplifier and low frequency switching applications.
2N6052*
NPN
• High DC Current Gain — • • w
hFE = 3500 (Typ) @ IC