2N5937
Silicon NPN Power TransistorsINCHANGE Semiconductor
isc Silicon NPN Power Transistors
isc Product Specification
2N5937
DESCRIPTION ·DC Current Gain-
: hFE= 20-100@IC= 30A ·Low Collector Saturation Voltage-
: VCE(sat)= 2.0V(Max)@ IC= 20A
APPLICATIONS ·Designed for use in power switching circuits,audio amplifiers,
series an
Inchange Semiconductor
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2N5937
Bipolar NPN Device2N5937
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44)
6.35 (0.25) 9.15 (0.36)
1.52 (0.06) 3.43 (0.135)
Bipolar NPN Device in a Hermetically sealed TO3
Metal Package.
38.61 (1.52) 39.12 (1.54) 29.9 (1.177) 30.4 (1.197) 16.64 (0.655) 17.15 (0.675) 0.97 (0.060) 1.10
Seme LAB
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2N5958
PNP Transistor20 AMP PNP
Sorted by IC, then VCEO
Part Number
mIaCx (A)
mVCaExO (V)
Ratings based on 25˚C case temperature unless otherwise specified
mhFiEn
mhaFEx
@Ic (A)
VmCEa(sxat) (V)
@(A)IC
mfTin (MHz)
mPaTx
*TC=100°C
(W)
Package
2N5741
20 60 20 80 10 1.5 10 10 65*
TO-3
2N5743
20 60 20 80 1
SSDI
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