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Datasheet 2N5934 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | 2N5934 | Silicon NPN Power Transistors INCHANGE Semiconductor
isc Silicon NPN Power Transistors
isc Product Specification
2N5934
DESCRIPTION ·DC Current Gain-
: hFE= 20-100@IC= 20A ·Low Collector Saturation Voltage-
: VCE(sat)= 2.0V(Max)@ IC= 20A
APPLICATIONS ·Designed for general purpose power amplifier and switching
applications. |
 Inchange Semiconductor |
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| 1 | 2N5934 | Bipolar NPN Device in a Hermetically sealed TO3 Metal Package 2N5934
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9.15 (0.36)
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package.
38.61 (1.52) 39.12 (1.54)
0.97 (0.060) 1.10 (0.043)
29.9 (1.177) 30.4 (1.197)
22.23 (0.875) ma |
 Seme LAB |
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