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2N5679 & 2N5680 PNP Power Silicon Transistor Features JAN, JANTX, JANTXV, JANS, and JANSR 100K rads (si) per MIL-PRF-19500/560 TO-39 (TO-205AD) Package Rev. V1 Electrical Characteristics Parameter Off Characteristics Collector - Emitter Breakdown Voltage Collector - Emitter Cutoff Current
2N5679 2N5680 PNP SILICON 2N5681 2N5682 NPN SILICON CASE 79-02, STYLE 1 TO-5 (TO-205AA) GENERAL PURPOSE TRANSISTOR MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current —Collector Current Continuous @Total Device Dissipation TA = 25°C Derate ab
2N5679 2N5680 PNP 2N5681 2N5682 NPN COMPLEMENTARY SILICON POWER TRANSISTORS TO-39 CASE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5679, 2N5681 series devices are complementary silicon power transistors, manufactured by the epitaxial planar process, designed for ge
Bipolar Transistor Description: A Silicon epitaxial PNP planer transistor in a TO-39 type package designed for use as drivers for high transistors in general purpose amplifier and switching circuits. Collector 3 2 Base 1 Emitter Maximum Ratings: Characteristic Collector Emitter Voltage Collector
10 AMP PNP(continued) Sorted by IC, then VCEO Part Number mIaCx (A) mVCaExO (V) Ratings based on 25˚C case temperature unless otherwise specified mhFiEn mhaFEx @Ic (A) VmCEa(sxat) (V) @(A)IC mfTin (MHz) mPaTx *TC=100°C (W) Package 2N5291 10 100 70 200 5 0.9 5 40 116 TO-61/I 2N5
2N5675 Dimensions in mm (inches). 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. Bipolar PNP Device. 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. VCEO = 100
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