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Datasheet 2N5662 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | 2N5662 | Bipolar NPN Device 2N5662
Dimensions in mm (inches).
8.51 (0.34) 9.40 (0.37)
7.75 (0.305) 8.51 (0.335)
6.10 (0.240) 6.60 (0.260)
12.70 (0.500)
min.
(00.0.8395)max.
0.41 (0.016) 0.53 (0.021)
dia.
5.08 (0.200) typ.
0.74 (0.029) 1.14 (0.045)
0.71 (0.028) 0.86 (0.034)
2 13
45°
2.54 (0.100)
1 – Emitter
TO39 (T |
 Seme LAB |
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| 3 | 2N5662 | Silicon NPN Transistor Description
Semicoa Semiconductors offers: • Screening and processing per MIL-PRF-19500 Appendix E • JAN level (2N5662J) • JANTX level (2N5662JX) • JANTXV level (2N5662JV) • QCI to the applicable level • 100% die visual inspection per MIL-STD-750 method
2072 for JANTXV • Radiation test |
 Semicoa Semiconductor |
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| 2 | 2N5662 | NPN POWER SILICON TRANSISTOR TECHNICAL DATA
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/454 Devices 2N5660 2N5661 2N5662 2N5663 Qualified Level JAN, JANTX JANTXV
MAXIMUM RATINGS Ratings
Collector-Emitter Voltage Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current Collector Current
S |
 Microsemi Corporation |
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| 1 | 2N5662 | Trans GP BJT NPN 200V 2A 3-Pin TO-5 |
 New Jersey Semiconductor |
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