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2N5551C  

KEC
KEC

2N5551C

EPITAXIAL PLANAR NPN TRANSISTOR

SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. FEATURES High Collector Breakdwon Voltage : VCBO=180V, VCEO=160V Low Leakage Current. : ICBO=50nA(Max.), VCB=120V Low Saturation Voltage : VCE(sat)=0.2V(Max.), IC=50mA, IB=5mA




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2N5551  

  
Trans GP BJT NPN 160V 0.6A 3-Pin TO-92 Box



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FET



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2N5556  

  
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2N5556  

  
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2N5550  

  
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