2N5551BU 전자부품 데이터시트

2N5551 / MMBT5551 — NPN General-Purpose Amplifier June 2013 2N5551 / MMBT5551 NPN General-Purpose Amplifier Description This device is designed for general-purpose high-voltage amplifiers and gas discharge display drivers. 2N5551 MMBT5551 3 TO-92 2 1 SOT-23 Marking: 3S 1. Base 2. Emitter 3. C

SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. FEATURES High Collector Breakdwon Voltage : VCBO=180V, VCEO=160V Low Leakage Current. : ICBO=50nA(Max.) VCB=120V Low Saturation Voltage : VCE(sat)=0.2V(Max.) IC=50mA, IB=5mA Low Noise : NF=8dB (Max.) MAXIMUM RATING

2N5551 / MMBT5551 — NPN General-Purpose Amplifier June 2013 2N5551 / MMBT5551 NPN General-Purpose Amplifier Description This device is designed for general-purpose high-voltage amplifiers and gas discharge display drivers. 2N5551 MMBT5551 3 TO-92 2 1 SOT-23 Marking: 3S 1. Base 2. Emitter 3. C

2N5551 HIGH VOLTAGE SWITCHING TRANSISTOR „ FEATURES * High collector-emitter voltage: VCEO=160V * High current gain „ APPLICATIONS * Telephone switching circuit * Amplifier NPN SILICON TRANSISTOR 1 SOT-89 1 TO-92 „ ORDERING INFORMATION Normal 2N5551-x-AB3-R 2N5551-x-T92-B 2N5551-x-251-K Order

SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. FEATURES High Collector Breakdwon Voltage : VCBO=180V, VCEO=160V Low Leakage Current. : ICBO=50nA(Max.) VCB=120V Low Saturation Voltage : VCE(sat)=0.2V(Max.) IC=50mA, IB=5mA MAXIMUM RATING (Ta=25 ) CHARACTERISTIC