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Datasheet 2N5551 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
26 | 2N5551 | Amplifier Transistors MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by 2N5550/D
Amplifier Transistors
NPN Silicon
COLLECTOR 3
2 BASE
1 EMITTER
MAXIMUM RATINGS
Rating
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipatio |
Motorola Semiconductors |
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25 | 2N5551 | Bipolar Transistor Bipolar Transistor
Collector 3
2 Base
1 Emitter
Maximum Ratings:
Characteristic Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Continuous Collector Current Total Device Dissipation (TA = +25°C), Derate above 25°C Total Device Dissipation(TC = +25°C), Derate above 2 |
Multicomp |
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24 | 2N5551 | Silicon NPN Power Transistor INCHANGE Semiconductor
isc Silicon NPN Power Transistor
DESCRIPTION ·NPN high-voltage transistor ·Low current (max. 300 mA) ·High voltage (max. 160 V) ·Complements to 2N5401.
isc Product Specification
2N5551
APPLICATIONS ·Designed for Switching and amplification
in high voltage applications , |
Inchange Semiconductor |
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23 | 2N5551 | EPITAXIAL PLANAR NPN TRANSISTOR SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION.
FEATURES High Collector Breakdwon Voltage : VCBO=180V, VCEO=160V Low Leakage Current. : ICBO=50nA(Max.), VCB=120V Low Saturation Voltage : VCE(sat)=0.2V(Max.), IC=50mA, IB=5mA Low Noise : NF=8dB (Max.)
MAXIMUM RATIN |
KEC |
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Número de pieza | Descripción | Fabricantes | |
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