2N5551 PDF 데이터시트

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N5550; 2N5551 NPN high-voltage transistors Product specification Supersedes data of 1999 Apr 23 2004 Oct 28 Philips Semiconductors NPN high-voltage transistors Product specification 2N5550; 2N555

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N5550/D Amplifier Transistors NPN Silicon COLLECTOR 3 2 BASE 1 EMITTER MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Curren

Bipolar Transistor Collector 3 2 Base 1 Emitter Maximum Ratings: Characteristic Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Continuous Collector Current Total Device Dissipation (TA = +25°C), Derate above 25°C Total Device

SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. FEATURES High Collector Breakdwon Voltage : VCBO=180V, VCEO=160V Low Leakage Current. : ICBO=50nA(Max.), VCB=120V Low Saturation Voltage : VCE(sat)=0.2V(Max.), IC=50mA, IB=5mA

UNISONIC TECHNOLOGIES CO., LTD 2N5551 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR  FEATURES * High collector-emitter voltage: VCEO=160V * High current gain  APPLICATIONS * Telephone switching circuit * Amplifier  ORDERING INFORMATION

2N5551 HIGH VOLTAGE SWITCHING TRANSISTOR „ FEATURES * High collector-emitter voltage: VCEO=160V * High current gain „ APPLICATIONS * Telephone switching circuit * Amplifier NPN SILICON TRANSISTOR 1 SOT-89 1 TO-92 „ ORDERING INFORMATION Normal 2N5551-x-AB

2N5550, 2N5551 Preferred Device Amplifier Transistors NPN Silicon Features • These are Pb−Free Devices* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Collector − Emitter Voltage 2N5550 2N5551 Collector − Base Voltage 2N5